Michihiro Sato, Yosuke Takahashi. Simulation of Dislocation Accumulation in Impurity Doped-ULSI Cells and Electric Characteristic Evaluations. IJAT, 10(2):195-200, 2016. [doi]
@article{SatoT16,
title = {Simulation of Dislocation Accumulation in Impurity Doped-ULSI Cells and Electric Characteristic Evaluations},
author = {Michihiro Sato and Yosuke Takahashi},
year = {2016},
doi = {10.20965/ijat.2016.p0195},
url = {http://dx.doi.org/10.20965/ijat.2016.p0195},
researchr = {https://researchr.org/publication/SatoT16},
cites = {0},
citedby = {0},
journal = {IJAT},
volume = {10},
number = {2},
pages = {195-200},
}