Simulation of Dislocation Accumulation in Impurity Doped-ULSI Cells and Electric Characteristic Evaluations

Michihiro Sato, Yosuke Takahashi. Simulation of Dislocation Accumulation in Impurity Doped-ULSI Cells and Electric Characteristic Evaluations. IJAT, 10(2):195-200, 2016. [doi]

Abstract

Abstract is missing.