Characterization, modeling and comparison of 1/f noise in Si/SiGe: C HBTs issued from three advanced BiCMOS technologies

Marcelino Seif, F. Pascal, Bruno Sagnes, J. Elbeyrouthy, A. Hoffmann, Sébastien Haendler, P. Chevalier, D. Gloria. Characterization, modeling and comparison of 1/f noise in Si/SiGe: C HBTs issued from three advanced BiCMOS technologies. In 29th International Conference on Microelectronics, ICM 2017, Beirut, Lebanon, December 10-13, 2017. pages 1-4, IEEE, 2017. [doi]

Abstract

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