Sanghyun Seo, Eunjung Cho, Giorgi Aroshvili, Chong Jin, Dimitris Pavlidis, Laurence Considine. Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si::3::N::4::. IEICE Transactions, 93-C(8):1245-1250, 2010. [doi]
@article{SeoCAJPC10,
title = {Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si::3::N::4::},
author = {Sanghyun Seo and Eunjung Cho and Giorgi Aroshvili and Chong Jin and Dimitris Pavlidis and Laurence Considine},
year = {2010},
url = {http://search.ieice.org/bin/summary.php?id=e93-c_8_1245},
researchr = {https://researchr.org/publication/SeoCAJPC10},
cites = {0},
citedby = {0},
journal = {IEICE Transactions},
volume = {93-C},
number = {8},
pages = {1245-1250},
}