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Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si::3::N::4::

Sanghyun Seo, Eunjung Cho, Giorgi Aroshvili, Chong Jin, Dimitris Pavlidis, Laurence Considine. Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si::3::N::4::. IEICE Transactions, 93-C(8):1245-1250, 2010. [doi]

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