Power Efficient Level Shifter for 16 nm FinFET Near Threshold Circuits

Alexander Shapiro, Eby G. Friedman. Power Efficient Level Shifter for 16 nm FinFET Near Threshold Circuits. IEEE Trans. VLSI Syst., 24(2):774-778, 2016. [doi]

@article{ShapiroF16,
  title = {Power Efficient Level Shifter for 16 nm FinFET Near Threshold Circuits},
  author = {Alexander Shapiro and Eby G. Friedman},
  year = {2016},
  doi = {10.1109/TVLSI.2015.2409051},
  url = {http://dx.doi.org/10.1109/TVLSI.2015.2409051},
  researchr = {https://researchr.org/publication/ShapiroF16},
  cites = {0},
  citedby = {0},
  journal = {IEEE Trans. VLSI Syst.},
  volume = {24},
  number = {2},
  pages = {774-778},
}