Baldeo Sharan Sharma, M. S. Bhat. Design of high performance dual-gate nano-scale In0.55Ga0.45 as transistor with modified substrate geometry. In 8th IEEE Annual Ubiquitous Computing, Electronics and Mobile Communication Conference, UEMCON 2017, New York City, NY, USA, October 19-21, 2017. pages 271-277, IEEE, 2017. [doi]
@inproceedings{SharmaB17-4, title = {Design of high performance dual-gate nano-scale In0.55Ga0.45 as transistor with modified substrate geometry}, author = {Baldeo Sharan Sharma and M. S. Bhat}, year = {2017}, doi = {10.1109/UEMCON.2017.8249045}, url = {https://doi.org/10.1109/UEMCON.2017.8249045}, researchr = {https://researchr.org/publication/SharmaB17-4}, cites = {0}, citedby = {0}, pages = {271-277}, booktitle = {8th IEEE Annual Ubiquitous Computing, Electronics and Mobile Communication Conference, UEMCON 2017, New York City, NY, USA, October 19-21, 2017}, publisher = {IEEE}, isbn = {978-1-5386-1104-3}, }