Design of high performance dual-gate nano-scale In0.55Ga0.45 as transistor with modified substrate geometry

Baldeo Sharan Sharma, M. S. Bhat. Design of high performance dual-gate nano-scale In0.55Ga0.45 as transistor with modified substrate geometry. In 8th IEEE Annual Ubiquitous Computing, Electronics and Mobile Communication Conference, UEMCON 2017, New York City, NY, USA, October 19-21, 2017. pages 271-277, IEEE, 2017. [doi]

Abstract

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