Silicon Photonic Micro-Ring Modulator-based 4 x 112 Gb/s O-band WDM Transmitter with Ring Photocurrent-based Thermal Control in 28nm CMOS

Jahnavi Sharma, Hao Li, Zhe Xuan, Ranjeet Kumar, Chun-Ming Hsu, Meer Sakib, Peicheng Liao, Haisheng Rong, James E. Jaussi, Ganesh Balamurugan. Silicon Photonic Micro-Ring Modulator-based 4 x 112 Gb/s O-band WDM Transmitter with Ring Photocurrent-based Thermal Control in 28nm CMOS. In 2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021. pages 1-2, IEEE, 2021. [doi]

@inproceedings{SharmaLXKHSLRJB21,
  title = {Silicon Photonic Micro-Ring Modulator-based 4 x 112 Gb/s O-band WDM Transmitter with Ring Photocurrent-based Thermal Control in 28nm CMOS},
  author = {Jahnavi Sharma and Hao Li and Zhe Xuan and Ranjeet Kumar and Chun-Ming Hsu and Meer Sakib and Peicheng Liao and Haisheng Rong and James E. Jaussi and Ganesh Balamurugan},
  year = {2021},
  doi = {10.23919/VLSICircuits52068.2021.9492486},
  url = {https://doi.org/10.23919/VLSICircuits52068.2021.9492486},
  researchr = {https://researchr.org/publication/SharmaLXKHSLRJB21},
  cites = {0},
  citedby = {0},
  pages = {1-2},
  booktitle = {2021 Symposium on VLSI Circuits, Kyoto, Japan, June 13-19, 2021},
  publisher = {IEEE},
  isbn = {978-4-86348-780-2},
}