Strained Si: Opportunities and challenges in nanoscale MOSFET

Rajneesh Sharma, Ashwani K. Rana. Strained Si: Opportunities and challenges in nanoscale MOSFET. In 2nd IEEE International Conference on Recent Trends in Information Systems, ReTIS 2015, Kolkata, India, July 9-11, 2015. pages 475-480, IEEE, 2015. [doi]

@inproceedings{SharmaR15-1,
  title = {Strained Si: Opportunities and challenges in nanoscale MOSFET},
  author = {Rajneesh Sharma and Ashwani K. Rana},
  year = {2015},
  doi = {10.1109/ReTIS.2015.7232926},
  url = {http://dx.doi.org/10.1109/ReTIS.2015.7232926},
  researchr = {https://researchr.org/publication/SharmaR15-1},
  cites = {0},
  citedby = {0},
  pages = {475-480},
  booktitle = {2nd IEEE International Conference on Recent Trends in Information Systems, ReTIS 2015, Kolkata, India, July 9-11, 2015},
  publisher = {IEEE},
  isbn = {978-1-4799-8349-0},
}