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Simulation Study on Single-Event Burnout Reliability of 900V 4H-SiC Quasi Vertical Double Diffused MOSFET

Jin-Ke Shi, Ying Wang, Xin-Xing Fei, Biao Sun, Yan-Xing Song, Yu-Qian Liu, Wei Zhang. Simulation Study on Single-Event Burnout Reliability of 900V 4H-SiC Quasi Vertical Double Diffused MOSFET. IEEE Access, 13:5023-5031, 2025. [doi]

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