A. Shickova, Ben Kaczer, A. Veloso, M. Aoulaiche, M. Houssa, H. E. Maes, Guido Groeseneken, J. A. Kittl. NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase. Microelectronics Reliability, 47(4-5):505-507, 2007. [doi]
@article{ShickovaKVAHMGK07,
title = {NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase},
author = {A. Shickova and Ben Kaczer and A. Veloso and M. Aoulaiche and M. Houssa and H. E. Maes and Guido Groeseneken and J. A. Kittl},
year = {2007},
doi = {10.1016/j.microrel.2007.01.046},
url = {http://dx.doi.org/10.1016/j.microrel.2007.01.046},
tags = {reliability},
researchr = {https://researchr.org/publication/ShickovaKVAHMGK07},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {47},
number = {4-5},
pages = {505-507},
}