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A. Shickova, Ben Kaczer, A. Veloso, M. Aoulaiche, M. Houssa, H. E. Maes, Guido Groeseneken, J. A. Kittl. NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase. Microelectronics Reliability, 47(4-5):505-507, 2007. [doi]