External Links

Cite Key

Statistics

  • References: 0
  • Cited by: 0
  • Reviews: 0
  • Bibliographies: 0

PDF

Researchr

Researchr is a web site for finding, collecting, sharing, and reviewing scientific publications, for researchers by researchers.

Sign up for an account to create a profile with publication list, tag and review your related work, and share bibliographies with your co-authors.

Impact of gate-to-source/drain misalignments on source-side injection Schottky barrier charge-trapping memory cells evaluated using numerical programming-trapping iterations

Chun-Hsing Shih, Yen-Hsiang Lo, Yu-Hsuan Chen, Jr-Jie Tsai. Impact of gate-to-source/drain misalignments on source-side injection Schottky barrier charge-trapping memory cells evaluated using numerical programming-trapping iterations. Microelectronics Reliability, 74:9-14, 2017. [doi]

Abstract

Abstract is missing.

runs on