GaN Nanowire Field Emitters with a Self-Aligned Gate Process

Pao-Chuan Shih, Girish Rughoobur, Peng Xiang, Kai Liu, Kai Cheng, Akintunde Ibitayo Akinwande, Tomás Palacios. GaN Nanowire Field Emitters with a Self-Aligned Gate Process. In 2020 Device Research Conference, DRC 2020, Columbus, OH, USA, June 21-24, 2020. pages 1-2, IEEE, 2020. [doi]

@inproceedings{ShihRXLCAP20,
  title = {GaN Nanowire Field Emitters with a Self-Aligned Gate Process},
  author = {Pao-Chuan Shih and Girish Rughoobur and Peng Xiang and Kai Liu and Kai Cheng and Akintunde Ibitayo Akinwande and Tomás Palacios},
  year = {2020},
  doi = {10.1109/DRC50226.2020.9135161},
  url = {https://doi.org/10.1109/DRC50226.2020.9135161},
  researchr = {https://researchr.org/publication/ShihRXLCAP20},
  cites = {0},
  citedby = {0},
  pages = {1-2},
  booktitle = {2020 Device Research Conference, DRC 2020, Columbus, OH, USA, June 21-24, 2020},
  publisher = {IEEE},
  isbn = {978-1-7281-7047-3},
}