Table of Contents

• A Platform for Monolithic Back End of Line III-V IntegrationJun Tao, Debarghya Sarkar, Sizhe Weng, Hyun-Uk Chae, Ragib Ahsan, Rehan Kapadia. 1-2 [doi]
• Modeling and Optimization of Advanced 3D NAND MemoryMehdi Saremi, Ashish Pal, Liu Jiang, El Mehdi Bazizi, Helen Lee, Xi-Wei Lin, Blessy Alexander, Buvna Ayyagari-Sangamalli. 1-2 [doi]
• Doped WS2 transistors with large on-off ratio and high on-currentAravindh Kumar, Koosha Nassiri Nazif, Pranav Ramesh, Krishna Saraswat. 1-2 [doi]
• Modeling Multi-states in Ferroelectric Tunnel JunctionYuan-Chun Luo, Jae Hur, Panni Wang, Asif Islam Khan, Shimeng Yu. 1-2 [doi]
• Reliability of Ferroelectric HfO2-based Memories: From MOS Capacitor to FeFETAva J. Tan, Li-Chen Wang, Yu-Hung Liao, Jong-Ho Bae, Chenming Hu, Sayeef S. Salahuddin. 1-2 [doi]
• Low-Voltage Operation of MFSFET with Ferroelectric Nondoped HfO2 Formed by Kr/O2-Plasma SputteringShun'ichiro Ohmi, M. G. Kim, M. Kataoka, M. Hayashi, Rengie Mark D. Mailig. 1-2 [doi]
• Mobility Enhancement and Reliability Characterization of Back-Channel-Etch Amorphous InGaZnO TFT with Double LayersChia-Chun Yen, An-Hung Tai, Yu-Chieh Liu, Chun-Hung Yeh, C. W. Liu. 1-2 [doi]
• 2-μm-Compatible AlInAsSb Avalanche PhotodiodesAndrew H. Jones, Stephen D. March, Seth R. Bank, Joe C. Campbell. 1-2 [doi]
• High-Density Multilayer Graphene Microelectrode Arrays for Optogenetic Electrophysiology in Human Embryonic Kidney CellsJ. Park, D. Mao, Y. Xie, Z. Xiong, G. Xu. 1-2 [doi]
• Phase and Carrier Polarity Control of Sputtered MoTe2 by Plasma-induced Defect EngineeringChih-Pin Lin, Hao-Hua Hsu, Tuo-Hung Hou. 1-2 [doi]
• Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakageWenjian Liu, Islam Sayed, Brian Romanczyk, Nirupam Hatui, Jana Georgieva, Haoran Li, Stacia Keller, Umesh K. Mishra. 1-2 [doi]
• Polarization-induced Strain-coupled TMD FETs (PS FETs) for Non-Volatile Memory ApplicationsNiharika Thakuria, Atanu K. Saha, Sandeep Krishna Thirumala, Daniel Schulman, Saptarshi Das, Sumeet Kumar Gupta. 1-2 [doi]
• Micro-transfer Printing of GaN HEMTs for Heterogeneous Integration and Flexible RF Circuit DesignBrian P. Downey, Andy Xie, Shawn Mack, D. Scott Katzer, James G. Champlain, Yu Cao, Neeraj Nepal, Tyler A. Growden, Vikrant J. Gokhale, Robert L. Coffie, Matthew T. Hardy, Edward Beam, Cathy Lee, David J. Meyer. 1-2 [doi]
• Flexible Low-Power Superlattice-Like Phase Change MemoryAsir Intisar Khan, Alwin Daus, Eric Pop. 1 [doi]
• Enabling Atmospheric Operation of Nanoscale Vacuum Channel TransistorsGirish Rughoobur, J. Zhao, L. Jain, A. Zubair, T. Palacios, J. Kong, Akintunde Ibitayo Akinwande. 1-2 [doi]
• Understanding of Multiple Resistance States by Current-sweep Measurement and Compliance Current Modulation in 2D MoS2-based Non-volatile Resistance Switching DevicesXiaohan Wu, Ruijing Ge, Deji Akinwande, Jack C. Lee. 1-2 [doi]
• High-k LaBxNy gate insulator formed by the Ar/N2 plasma sputtering of N-doped LaB6 metal thin films and its application to floating-gate memoryKyung-Eun Park, Shun'ichiro Ohmi. 1-2 [doi]
• High Frequency Characteristics of Graphene Geometric DiodesJohn Stearns, Garret Moddel. 1-2 [doi]
• Correlation of Material Structure and Electronic Properties in 2D Platinum-Diselenide-based DevicesSebastian Lukas, Satender Kataria, Maximilian Prechtl, Oliver Hartwig, Alexander Meledin, Joachim Mayer, Daniel Neumaier, Georg S. Duesberg, Max C. Lemme. 1-2 [doi]
• Stopping Resistance Drift in Phase Change Memory CellsRaihan Sayeed Khan, A. B. M. Hasan Talukder, Faruk Dirisaglik, Ali Gokirmak, Helena Silva. 1-2 [doi]
• The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applicationsEldad Bahat-Treidel, Oliver Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero, Joachim Würfl. 1-2 [doi]
• Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHzWoojin Choi, Venkatesh Balasubramanian, Peter M. Asbeck, Shadi A. Dayeh. 1-2 [doi]
• 2.3 kV 4H-SiC Accumulation-channel JBSFETs: Experimental Comparison of Linear, Hexagonal and Octagonal Cell TopologiesAditi Agarwal, Kijeong Han, B. Jayant Baliga. 1-2 [doi]
• Materials and Technology Issues for the Next Generation of Power Electronic DevicesAhmad Zubair, John Niroula, Nadim Chowdhury, Yuhao Zhang, Jori Lemettinen, Tomás Palacios. 1-2 [doi]
• Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D ElectronicsYury Yu. Illarionov, A. G. Banshchikov, Theresia Knobloch, D. K. Polyushkin, S. Wachter, V. V. Fedorov, S. M. Suturin, M. Stöger-Pollach, T. Mueller, M. I. Vexler, N. S. Sokolov, Tibor Grasser. 1-2 [doi]
• A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMTPawana Shrestha, Matthew Guidry, Brian Romanczyk, Rohit R. Karnaty, Nirupam Hatui, Christian Wurm, Athith Krishna, Shubhra S. Pasayat, Stacia Keller, James F. Buckwalter, Umesh K. Mishra. 1-2 [doi]
• Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine TreatmentYi-Ping Huang, Ching-Sung Lee, Wei-Chou Hsu. 1-2 [doi]
• Effect of recessed electrodes on contact resistance in Organic Thin Film Transistor based on polymer dielectricFiheon Imroze, C. A. Mithun, Karunakaran Logesh, P. Venkatakrishnan, S. Dutta. 1-2 [doi]
• Ultra-Durable and Reliable High-k Textile Capacitors for Wearables and RoboticsAkanksha Rohit, Yunus Kelestemur, Savas Kaya, Parthiban Rajan. 1-2 [doi]
• Towards Scalable Reconfigurable Field Effect Transistor using Flash Lamp AnnealingM. B. Khan, S. Ghosh, S. Prucnal, T. Mauersberger, R. Hübner, M. Simon, T. Mikolajick, A. Erbe, Y. M. Georgiev. 1-2 [doi]
• Demonstration of GaN Impact Ionization Avalanche Transit-Time (IMPATT) DiodeDong Ji, Burcu Ercan, Jia Zhuang, Lei Gu, Juan Rivas-Davila, Srabanti Chowdhury. 1-2 [doi]
• Very High Parallel-Plane Surface Electric Field of 4.3 MV/cm in Ga2O3 Schottky Barrier Diodes with PtOx ContactsDevansh Saraswat, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing. 1-2 [doi]
• Utilizing Valley-Spin Hall Effect in WSe2 for Low Power Non-Volatile Flip-Flop DesignK. Cho, Sandeep Krishna Thirumala, X. Liu, Niharika Thakuria, Zhihong Chen, S. K. Gupta. 1-2 [doi]
• Multiplication characteristics of Al0.4Ga0.07In0.53As avalanche photodiodes grown as digital alloys on InP substratesS. Lee, S. H. Kodati, D. R. Fink, T. J. Ronningen, A. H. Jones, J. C. Campbell, M. Winslow, C. H. Grein, S. Krishna. 1-2 [doi]
• First Demonstration of GaN Vertical Power FinFETs on Engineered SubstrateA. Zubair, J. Perozek, J. Niroula, O. Aktas, V. Odnoblyudov, T. Palacios. 1-2 [doi]
• Hydrogen-terminated diamond FET and GaN HEMT delivering CMOS inverter operation at high-temperatureChenhao Ren, Mohamadali Malakoutian, Siwei Li, Srabanti Chowdhury. 1-2 [doi]
• Using Coplanar Waveguides as Spin-Wave Sources with Improved BandwidthH. Aquino, D. Connelly, A. Orlov, J. Chisum, Gary H. Bernstein, Wolfgang Porod. 1-2 [doi]
• Tri-Gate Ferroelectric FET Characterization and Modelling for Online Training of Neural Networks at Room Temperature and 233KSourav De, Md. Aftab Baig, Bo-Han Qiu, Darsen Lu, Po-Jung Sung, Fu. K. Hsueh, Yao-Jen Lee, Chun-Jung Su. 1-2 [doi]
• Millimeter-Wave GaN Device Modeling for Power AmplifiersYutaro Yamaguchi 0002, Keigo Nakatani, Koon Hoo Teo, Shintaro Shinjo. 1-2 [doi]
• RTD Light Emission around 1550 nm with IQE up to 6% at 300 KE. R. Brown, W. D. Zhang, P. Fakhimi, T. A. Growden, P. R. Berger. 1-2 [doi]
• Defect Assisted Metal-TMDs Interface Engineering: A First Principle InsightJeevesh Kumar, Ansh Ansh, Hemanjaneyulu Kuruva, Mayank Shrivastava. 1-2 [doi]
• Field Effect Light-Emitting Diode Integration for Enhanced Hole UtilizationMatthew Hartensveld, Jing Zhang. 1-2 [doi]
• GaN Nanowire Field Emitters with a Self-Aligned Gate ProcessPao-Chuan Shih, Girish Rughoobur, Peng Xiang, Kai Liu, Kai Cheng, Akintunde Ibitayo Akinwande, Tomás Palacios. 1-2 [doi]
• Thermal Engineering of Volatile Switching in PrMnO3 RRAM: Non-Linearity in DC IV Characteristics and Transient Switching SpeedJayatika Sakhuja, Sandip Lashkare, Vivek Saraswat, Udayan Ganguly. 1-2 [doi]
• Near-Nernstian pH Sensors Based on Hydrothermally Grown NiO Nanosheets on Hierarchically Roughened Si SubstratesChao-Yin Kuo, Shui-Jinn Wang, Po-Ting Chen, Rong-Ming Ko. 1-2 [doi]