2.3 kV 4H-SiC Accumulation-channel JBSFETs: Experimental Comparison of Linear, Hexagonal and Octagonal Cell Topologies

Aditi Agarwal, Kijeong Han, B. Jayant Baliga. 2.3 kV 4H-SiC Accumulation-channel JBSFETs: Experimental Comparison of Linear, Hexagonal and Octagonal Cell Topologies. In 2020 Device Research Conference, DRC 2020, Columbus, OH, USA, June 21-24, 2020. pages 1-2, IEEE, 2020. [doi]

Abstract

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