Seokbo Shim, Sungho Kim, Jooyoung Bae, Keunsik Ko, Eunryeong Lee, Kwidong Kim, Kyeongtae Kim, Sangho Lee, Jinhoon Hyun, Insung Koh, Joonhong Park, Minjeong Kim, Sunhye Shin, Dongha Lee, Yunyoung Lee, Sangah Hyun, Wonjohn Choi, Dain Im, Dongheon Lee, Jieun Jang, Sangho Lee, Junhyun Chun, Jonghoon Oh, Jinkook Kim, Seok Hee Lee. A 16Gb 1.2V 3.2Gb/s/pin DDR4 SDRAM with improved power distribution and repair strategy. In 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, CA, USA, February 11-15, 2018. pages 212-214, IEEE, 2018. [doi]
@inproceedings{ShimKBKLKKLHKPK18,
title = {A 16Gb 1.2V 3.2Gb/s/pin DDR4 SDRAM with improved power distribution and repair strategy},
author = {Seokbo Shim and Sungho Kim and Jooyoung Bae and Keunsik Ko and Eunryeong Lee and Kwidong Kim and Kyeongtae Kim and Sangho Lee and Jinhoon Hyun and Insung Koh and Joonhong Park and Minjeong Kim and Sunhye Shin and Dongha Lee and Yunyoung Lee and Sangah Hyun and Wonjohn Choi and Dain Im and Dongheon Lee and Jieun Jang and Sangho Lee and Junhyun Chun and Jonghoon Oh and Jinkook Kim and Seok Hee Lee},
year = {2018},
doi = {10.1109/ISSCC.2018.8310259},
url = {https://doi.org/10.1109/ISSCC.2018.8310259},
researchr = {https://researchr.org/publication/ShimKBKLKKLHKPK18},
cites = {0},
citedby = {0},
pages = {212-214},
booktitle = {2018 IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, CA, USA, February 11-15, 2018},
publisher = {IEEE},
isbn = {978-1-5090-4940-0},
}