Jun Shiomi, Tohru Ishihara, Hidetoshi Onodera. Area-efficient fully digital memory using minimum height standard cells for near-threshold voltage computing. Integration, 65:201-210, 2019. [doi]
@article{ShiomiIO19,
title = {Area-efficient fully digital memory using minimum height standard cells for near-threshold voltage computing},
author = {Jun Shiomi and Tohru Ishihara and Hidetoshi Onodera},
year = {2019},
doi = {10.1016/j.vlsi.2017.07.001},
url = {https://doi.org/10.1016/j.vlsi.2017.07.001},
researchr = {https://researchr.org/publication/ShiomiIO19},
cites = {0},
citedby = {0},
journal = {Integration},
volume = {65},
pages = {201-210},
}