Satoshi Shiraki, Shigeki Takahashi, Youichi Ashida, Atsuyuki Hiruma, Tsuyoshi Funaki. Loss reduction of lateral power diode on SOI substrate with trenched buried oxide layer. IEICE Electronic Express, 10(23):20130807, 2013. [doi]
@article{ShirakiTAHF13,
title = {Loss reduction of lateral power diode on SOI substrate with trenched buried oxide layer},
author = {Satoshi Shiraki and Shigeki Takahashi and Youichi Ashida and Atsuyuki Hiruma and Tsuyoshi Funaki},
year = {2013},
doi = {10.1587/elex.10.20130807},
url = {http://dx.doi.org/10.1587/elex.10.20130807},
researchr = {https://researchr.org/publication/ShirakiTAHF13},
cites = {0},
citedby = {0},
journal = {IEICE Electronic Express},
volume = {10},
number = {23},
pages = {20130807},
}