Improvement of oxide reliability in NAND flash memories using tight endurance cycling with shorter idling period - researchr publication authors

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R. Shirota, B.-J. Yang, Y.-Y. Chiu, Y. T. Wu, P. Y. Wang, J. H. Chang, M. Yano, M. Aoki, T. Takeshita, C. Y. Wang, I. Kurachi. Improvement of oxide reliability in NAND flash memories using tight endurance cycling with shorter idling period. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 12, IEEE, 2015. [doi]

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