R. Shirota, B.-J. Yang, Y.-Y. Chiu, Y. T. Wu, P. Y. Wang, J. H. Chang, M. Yano, M. Aoki, T. Takeshita, C. Y. Wang, I. Kurachi. Improvement of oxide reliability in NAND flash memories using tight endurance cycling with shorter idling period. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 12, IEEE, 2015. [doi]
@inproceedings{ShirotaYCWWCYAT15,
title = {Improvement of oxide reliability in NAND flash memories using tight endurance cycling with shorter idling period},
author = {R. Shirota and B.-J. Yang and Y.-Y. Chiu and Y. T. Wu and P. Y. Wang and J. H. Chang and M. Yano and M. Aoki and T. Takeshita and C. Y. Wang and I. Kurachi},
year = {2015},
doi = {10.1109/IRPS.2015.7112814},
url = {http://dx.doi.org/10.1109/IRPS.2015.7112814},
researchr = {https://researchr.org/publication/ShirotaYCWWCYAT15},
cites = {0},
citedby = {0},
pages = {12},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015},
publisher = {IEEE},
isbn = {978-1-4673-7362-3},
}