S. Shrivastava, U. Ganguly. Array programming scheme to enable improved transient based non-linearity in impact ionization based Si-NIPIN selectors for low power. In 17th Non-Volatile Memory Technology Symposium, NVMTS 2017, Aachen, Germany, August 30 - Sept. 1, 2017. pages 1-4, IEEE, 2017. [doi]
@inproceedings{ShrivastavaG17-0,
title = {Array programming scheme to enable improved transient based non-linearity in impact ionization based Si-NIPIN selectors for low power},
author = {S. Shrivastava and U. Ganguly},
year = {2017},
doi = {10.1109/NVMTS.2017.8171309},
url = {https://doi.org/10.1109/NVMTS.2017.8171309},
researchr = {https://researchr.org/publication/ShrivastavaG17-0},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {17th Non-Volatile Memory Technology Symposium, NVMTS 2017, Aachen, Germany, August 30 - Sept. 1, 2017},
publisher = {IEEE},
isbn = {978-1-5386-0477-9},
}