Abstract is missing.
- Array programming scheme to enable improved transient based non-linearity in impact ionization based Si-NIPIN selectors for low powerS. Shrivastava, U. Ganguly. 1-4 [doi]
- An efficient synaptic architecture for artificial neural networksIrem Boybat, Manuel Le Gallo, S. R. Nandakumar, Timoleon Moraitis, Tomas Tuma, Bipin Rajendran, Yusuf Leblebici, Abu Sebastian, Evangelos Eleftheriou. 1-4 [doi]
- Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAMMilan Pesic, Michael Hoffmann, Claudia Richter, Stefan Slesazeck, Uwe Schroeder, Thomas Mikolajick. 1-4 [doi]
- Endurance prediction and error Reduction in NAND flash using machine learningBarry Fitzgerald, Damien Hogan, Conor Ryan, Joe Sullivan. 1-8 [doi]
- A multiscale modeling approach for the simulation of OxRRAM devicesAndrea Padovani, Luca Larcher, Jiyong Woo, Hyunsang Hwang. 1-8 [doi]
- High speed and high-area efficiency non-volatile look-up table design based on magnetic tunnel junctionRana Alhalabi, Gregory di Pendina, Ioan Lucian Prejbeanu, Etienne Nowak. 1-4 [doi]
- Interfacial property tuning of heavy metal/CoFeB for large density STT-MRAMWenlong Cai, Kaihua Cao, Mengxing Wang, Shouzhong Peng, Jiaqi Zhou, Anni Cao, Boyu Zhang, Lezhi Wang, Yu Zhang, Jiaqi Wei, Xiaobin He, Hushan Cui, Chao Zhao, Weisheng Zhao. 1-4 [doi]
- Measuring and analyzing Random Telegraph Noise in Nanoscale Devices: The case of resistive random access memoriesFrancesco Maria Puglisi. 1-5 [doi]
- Thermal effects on the I-V characteristics of filamentary VCM based ReRAM-cells using a nanometer-sized heaterM. von Witzleben, E. Wichmann, C. Funck, K. Fleck, Rainer Waser, Ulrich Bottger, T. Breuer, Stephan Menzel. 1-5 [doi]
- Potential application of time dependent threshold switching in neuromorphic computingGuy Wicker, Boil Pashmakov. 1-2 [doi]
- Innovative GeS2/Sb2Te3 based phase change memory for low power applicationsJulia Kluge, Anthonin Verdy, Gabriele Navarro, Serge Blonkowski, Veronique Sousa, Sophie Chevalliez, Philippe Kowalczyk, Mathieu Bernard, Nicolas Bernier, Guillaume Bourgeois, Niccolo Castellani, Pierre Noe, Luca Perniola. 1-4 [doi]
- High-speed voltage-control spintronics memory focused on reduction in write currentHideyuki Sugiyama, Hiroaki Yoda, Katsuhiko Koi, Soichi Oikawa, B. Altansargai, Tomoaki Inokuchi, Satoshi Shirotori, M. Shimizu, Yuichi Kato, Y. Ohsawa, M. Ishikawa, A. Tiwari, Naoharu Shimomura, Y. Saito, Atsushi Kurobe. 1-5 [doi]
- Enhancement of CBRAM performance by controlled formation of a hourglass-shaped filamentAttilio Belmonte, Ludovic Goux, Jiyong Woo, Umberto Celano, Augusto Redolfi, Sergiu Clima, Gouri Sankar Kar. 1-5 [doi]
- Kinetic Monte Carlo modeling of the charge transport in a HfO2-based ReRAM with a rough anodeWilhelm Stehling, Elhameh Abbaspour, Christoph Jungemann, Stephan Menzel. 1-4 [doi]