Innovative GeS2/Sb2Te3 based phase change memory for low power applications

Julia Kluge, Anthonin Verdy, Gabriele Navarro, Serge Blonkowski, Veronique Sousa, Sophie Chevalliez, Philippe Kowalczyk, Mathieu Bernard, Nicolas Bernier, Guillaume Bourgeois, Niccolo Castellani, Pierre Noe, Luca Perniola. Innovative GeS2/Sb2Te3 based phase change memory for low power applications. In 17th Non-Volatile Memory Technology Symposium, NVMTS 2017, Aachen, Germany, August 30 - Sept. 1, 2017. pages 1-4, IEEE, 2017. [doi]

Abstract

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