Analysis and Simulation of a Low Leakage Conventional SRAM Memory Cell at Deep Sub-micron Level

N. K. Shukla, Shilpi Birla, R. K. Singh. Analysis and Simulation of a Low Leakage Conventional SRAM Memory Cell at Deep Sub-micron Level. In Vinu V. Das, R. Vijayakumar, Narayan C. Debnath, Janahanlal Stephen, Natarajan Meghanathan, Suresh Sankaranarayanan, P. M. Thankachan, Ford Lumban Gaol, Nessy Thankachan, editors, Information Processing and Management - International Conference on Recent Trends in Business Administration and Information Processing, BAIP 2010, Trivandrum, Kerala, India, March 26-27, 2010. Proceedings. Volume 70 of Communications in Computer and Information Science, pages 595-597, Springer, 2010. [doi]

Abstract

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