Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy

E. Sigle, David Weißhaupt, Michael Oehme, Hannes S. Funk, Daniel Schwarz, Fritz Berkmann, Jörg Schulze. Strained Ge Channels with High Hole Mobility Grown on Si Substrates by Molecular Beam Epitaxy. In Marko Koricic, Karolj Skala, Zeljka Car, Marina Cicin-Sain, Snjezana Babic, Vlado Sruk, Dejan Skvorc, Slobodan Ribaric, Bojan Jerbic, Stjepan Gros, Boris Vrdoljak, Mladen Mauher, Edvard Tijan, Tihomir Katulic, Juraj Petrovic, Tihana Galinac Grbac, Nikola Filip Fijan, Vera Gradisnik, editors, 44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021. pages 40-44, IEEE, 2021. [doi]

Abstract

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