A 60 GHz Power Amplifier With 14.5 dBm Saturation Power and 25% Peak PAE in CMOS 65 nm SOI

Alexandre Siligaris, Yasuhiro Hamada, Christopher Mounet, Christine Raynaud, Baudouin Martineau, Nicolas Deparis, Nathalie Rolland, Muneo Fukaishi, Pierre Vincent. A 60 GHz Power Amplifier With 14.5 dBm Saturation Power and 25% Peak PAE in CMOS 65 nm SOI. J. Solid-State Circuits, 45(7):1286-1294, 2010. [doi]

@article{SiligarisHMRMDRFV10,
  title = {A 60 GHz Power Amplifier With 14.5 dBm Saturation Power and 25% Peak PAE in CMOS 65 nm SOI},
  author = {Alexandre Siligaris and Yasuhiro Hamada and Christopher Mounet and Christine Raynaud and Baudouin Martineau and Nicolas Deparis and Nathalie Rolland and Muneo Fukaishi and Pierre Vincent},
  year = {2010},
  doi = {10.1109/JSSC.2010.2049456},
  url = {http://dx.doi.org/10.1109/JSSC.2010.2049456},
  researchr = {https://researchr.org/publication/SiligarisHMRMDRFV10},
  cites = {0},
  citedby = {0},
  journal = {J. Solid-State Circuits},
  volume = {45},
  number = {7},
  pages = {1286-1294},
}