On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs - researchr publication authors

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Eddy Simoen, Marc Aoulaiche, Anabela Veloso, M. Jurczak, Cor Claeys, L. Mendes Almeida, M. G. C. Andrade, A. Luque Rodriguez, J. A. Jimenez Tejada, C. Caillat, P. Fazan. On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs. In Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012. pages 338-341, IEEE, 2012. [doi]

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