Kamini Singh, R. S. Gamad, P. P. Bansod. Design and Analysis for Power Reduction with High SNM of 10T SRAM Cell. In Anirban Sengupta, Sudeb Dasgupta, Virendra Singh, Rohit Sharma, Santosh Kumar Vishvakarma, editors, VLSI Design and Test - 23rd International Symposium, VDAT 2019, Indore, India, July 4-6, 2019, Revised Selected Papers. Volume 1066 of Communications in Computer and Information Science, pages 541-549, Springer, 2019. [doi]
@inproceedings{SinghGB19-0,
title = {Design and Analysis for Power Reduction with High SNM of 10T SRAM Cell},
author = {Kamini Singh and R. S. Gamad and P. P. Bansod},
year = {2019},
doi = {10.1007/978-981-32-9767-8_45},
url = {https://doi.org/10.1007/978-981-32-9767-8_45},
researchr = {https://researchr.org/publication/SinghGB19-0},
cites = {0},
citedby = {0},
pages = {541-549},
booktitle = {VLSI Design and Test - 23rd International Symposium, VDAT 2019, Indore, India, July 4-6, 2019, Revised Selected Papers},
editor = {Anirban Sengupta and Sudeb Dasgupta and Virendra Singh and Rohit Sharma and Santosh Kumar Vishvakarma},
volume = {1066},
series = {Communications in Computer and Information Science},
publisher = {Springer},
isbn = {978-981-32-9767-8},
}