Wafer-level electromigration for reliability monitoring: Quick-turn electromigration stress with correlation to package-level stress

D. Slottke, R. J. Kamaladasa, M. Harmes, I. Tsamaret, M. Kobrinsky, Timothy McMullen, John Dunklee. Wafer-level electromigration for reliability monitoring: Quick-turn electromigration stress with correlation to package-level stress. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 3, IEEE, 2015. [doi]

Abstract

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