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Recessed gate Pt-AlGaN/GaN HEMT H2 sensor

Robert Sokolovskij, J. Zhang, H. Zheng, W. Li, Yang Jiang, G. Yang, Hongyu Yu, Pasqualina M. Sarro, G. Q. Zhang. Recessed gate Pt-AlGaN/GaN HEMT H2 sensor. In 2019 IEEE SENSORS, Montreal, QC, Canada, October 27-30, 2019. pages 1-4, IEEE, 2019. [doi]

Authors

Robert Sokolovskij

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J. Zhang

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H. Zheng

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W. Li

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Yang Jiang

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G. Yang

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Hongyu Yu

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Pasqualina M. Sarro

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G. Q. Zhang

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