Robert Sokolovskij, J. Zhang, H. Zheng, W. Li, Yang Jiang, G. Yang, Hongyu Yu, Pasqualina M. Sarro, G. Q. Zhang. Recessed gate Pt-AlGaN/GaN HEMT H2 sensor. In 2019 IEEE SENSORS, Montreal, QC, Canada, October 27-30, 2019. pages 1-4, IEEE, 2019. [doi]
@inproceedings{SokolovskijZZLJ19,
title = {Recessed gate Pt-AlGaN/GaN HEMT H2 sensor},
author = {Robert Sokolovskij and J. Zhang and H. Zheng and W. Li and Yang Jiang and G. Yang and Hongyu Yu and Pasqualina M. Sarro and G. Q. Zhang},
year = {2019},
doi = {10.1109/SENSORS43011.2019.8956797},
url = {https://doi.org/10.1109/SENSORS43011.2019.8956797},
researchr = {https://researchr.org/publication/SokolovskijZZLJ19},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {2019 IEEE SENSORS, Montreal, QC, Canada, October 27-30, 2019},
publisher = {IEEE},
isbn = {978-1-7281-1634-1},
}