Y. J. Song, H. J. Joo, S. K. Kang, H. H. Kim, J. H. Park, Y. M. Kang, E. Y. Kang, S. Y. Lee, K. Kim. Electrical properties of highly reliable 32Mb FRAM with advanced capacitor technology. Microelectronics Reliability, 45(7-8):1150-1153, 2005. [doi]
Abstract is missing.