High speed (1ns) and low voltage (1.5V) demonstration of 8Kb SOT-MRAM array

M. Y. Song, C. M. Lee, S. Y. Yang, G. L. Chen, K. M. Chen, I J. Wang, Y. C. Hsin, K. T. Chang, C.-F. Hsu, S. H. Li, J. H. Wei, T.-Y. Lee, M. F. Chang, X. Y. Bao, C. H. Diaz, S. J. Lin. High speed (1ns) and low voltage (1.5V) demonstration of 8Kb SOT-MRAM array. In IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022. pages 377-378, IEEE, 2022. [doi]

@inproceedings{SongLYCCWHCHLWL22,
  title = {High speed (1ns) and low voltage (1.5V) demonstration of 8Kb SOT-MRAM array},
  author = {M. Y. Song and C. M. Lee and S. Y. Yang and G. L. Chen and K. M. Chen and I J. Wang and Y. C. Hsin and K. T. Chang and C.-F. Hsu and S. H. Li and J. H. Wei and T.-Y. Lee and M. F. Chang and X. Y. Bao and C. H. Diaz and S. J. Lin},
  year = {2022},
  doi = {10.1109/VLSITechnologyandCir46769.2022.9830149},
  url = {https://doi.org/10.1109/VLSITechnologyandCir46769.2022.9830149},
  researchr = {https://researchr.org/publication/SongLYCCWHCHLWL22},
  cites = {0},
  citedby = {0},
  pages = {377-378},
  booktitle = {IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits 2022), Honolulu, HI, USA, June 12-17, 2022},
  publisher = {IEEE},
  isbn = {978-1-6654-9772-5},
}