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Failure mechanism analysis of off-state drain-to-source leakage current failure of a commercial 650 V discrete GaN-on-Si HEMT power device by accelerated power cycling test

S. Song, Stig Munk-Nielsen, C. Uhrenfeldt. Failure mechanism analysis of off-state drain-to-source leakage current failure of a commercial 650 V discrete GaN-on-Si HEMT power device by accelerated power cycling test. Microelectronics Reliability, 76:539-543, 2017. [doi]

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