A Calibration-Free 15-level/Cell eDRAM Computing-in-Memory Macro with 3T1C Current-Programmed Dynamic-Cascoded MLC achieving 233-to-304-TOPS/W 4b MAC

Jiahao Song, Xiyuan Tang, Haoyang Luo, Haoyi Zhang, Xin Qiao, Zixuan Sun, Xiangxing Yang, Yuan Wang 0001, Runsheng Wang, Ru Huang. A Calibration-Free 15-level/Cell eDRAM Computing-in-Memory Macro with 3T1C Current-Programmed Dynamic-Cascoded MLC achieving 233-to-304-TOPS/W 4b MAC. In IEEE Custom Integrated Circuits Conference, CICC 2023, San Antonio, TX, USA, April 23-26, 2023. pages 1-2, IEEE, 2023. [doi]

@inproceedings{SongTLZQSYWWH23,
  title = {A Calibration-Free 15-level/Cell eDRAM Computing-in-Memory Macro with 3T1C Current-Programmed Dynamic-Cascoded MLC achieving 233-to-304-TOPS/W 4b MAC},
  author = {Jiahao Song and Xiyuan Tang and Haoyang Luo and Haoyi Zhang and Xin Qiao and Zixuan Sun and Xiangxing Yang and Yuan Wang 0001 and Runsheng Wang and Ru Huang},
  year = {2023},
  doi = {10.1109/CICC57935.2023.10121207},
  url = {https://doi.org/10.1109/CICC57935.2023.10121207},
  researchr = {https://researchr.org/publication/SongTLZQSYWWH23},
  cites = {0},
  citedby = {0},
  pages = {1-2},
  booktitle = {IEEE Custom Integrated Circuits Conference, CICC 2023, San Antonio, TX, USA, April 23-26, 2023},
  publisher = {IEEE},
  isbn = {979-8-3503-9948-6},
}