A Calibration-Free 15-level/Cell eDRAM Computing-in-Memory Macro with 3T1C Current-Programmed Dynamic-Cascoded MLC achieving 233-to-304-TOPS/W 4b MAC

Jiahao Song, Xiyuan Tang, Haoyang Luo, Haoyi Zhang, Xin Qiao, Zixuan Sun, Xiangxing Yang, Yuan Wang 0001, Runsheng Wang, Ru Huang. A Calibration-Free 15-level/Cell eDRAM Computing-in-Memory Macro with 3T1C Current-Programmed Dynamic-Cascoded MLC achieving 233-to-304-TOPS/W 4b MAC. In IEEE Custom Integrated Circuits Conference, CICC 2023, San Antonio, TX, USA, April 23-26, 2023. pages 1-2, IEEE, 2023. [doi]

Abstract

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