Effects of Ge profiles on base transit time and base resistance of SiGe HBT's - researchr publication authors

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J. Song, J. S. Yuan, F. Schwierz, D. Schipanski. Effects of Ge profiles on base transit time and base resistance of SiGe HBT's. In Proceedings of Third International Conference on Electronics, Circuits, and Systems, ICECS 1996, Rodos, Greece, October 13-16, 1996. pages 876-879, IEEE, 1996. [doi]

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