Fast Neutron Irradiation Effects on Multiple Gallium Nitride (GaN) Device Reliability in Presence of Ambient Variations

Luis Soriano, Hector Valencia, Ke-Xun Sun, Ronald Nelson. Fast Neutron Irradiation Effects on Multiple Gallium Nitride (GaN) Device Reliability in Presence of Ambient Variations. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-6, IEEE, 2020. [doi]

@inproceedings{SorianoVSN20,
  title = {Fast Neutron Irradiation Effects on Multiple Gallium Nitride (GaN) Device Reliability in Presence of Ambient Variations},
  author = {Luis Soriano and Hector Valencia and Ke-Xun Sun and Ronald Nelson},
  year = {2020},
  doi = {10.1109/IRPS45951.2020.9129517},
  url = {https://doi.org/10.1109/IRPS45951.2020.9129517},
  researchr = {https://researchr.org/publication/SorianoVSN20},
  cites = {0},
  citedby = {0},
  pages = {1-6},
  booktitle = {2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020},
  publisher = {IEEE},
  isbn = {978-1-7281-3199-3},
}