In adsorption on Si(112) and its impact on Ge growth

Moritz Speckmann, Thomas Schmidt, Jan Ingo Flege, Jens Falta. In adsorption on Si(112) and its impact on Ge growth. IBM Journal of Research and Development, 55(4):11, 2011. [doi]

@article{SpeckmannSFF11,
  title = {In adsorption on Si(112) and its impact on Ge growth},
  author = {Moritz Speckmann and Thomas Schmidt and Jan Ingo Flege and Jens Falta},
  year = {2011},
  doi = {10.1147/JRD.2011.2158763},
  url = {http://dx.doi.org/10.1147/JRD.2011.2158763},
  researchr = {https://researchr.org/publication/SpeckmannSFF11},
  cites = {0},
  citedby = {0},
  journal = {IBM Journal of Research and Development},
  volume = {55},
  number = {4},
  pages = {11},
}