Analysis and In-Situ Measurement of Thermal-Mechanical Strain in Active Silicon Power Semiconductors

Matthew L. Spencer, Robert D. Lorenz. Analysis and In-Situ Measurement of Thermal-Mechanical Strain in Active Silicon Power Semiconductors. In Industry Applications Society Annual Meeting, IAS 2008, Edmonton, Alberta, Canada, 5-9 Octobert, 2008. pages 1-7, IEEE, 2008. [doi]

@inproceedings{SpencerL08-1,
  title = {Analysis and In-Situ Measurement of Thermal-Mechanical Strain in Active Silicon Power Semiconductors},
  author = {Matthew L. Spencer and Robert D. Lorenz},
  year = {2008},
  doi = {10.1109/08IAS.2008.360},
  url = {http://dx.doi.org/10.1109/08IAS.2008.360},
  researchr = {https://researchr.org/publication/SpencerL08-1},
  cites = {0},
  citedby = {0},
  pages = {1-7},
  booktitle = {Industry Applications Society Annual Meeting, IAS 2008, Edmonton, Alberta, Canada, 5-9 Octobert, 2008},
  publisher = {IEEE},
  isbn = {978-1-4244-2278-4},
}