Impact of Channel Engineering on Unity Gain Frequency and Noise-Figure in 90nm NMOS Transistor for RF Applications

R. Srinivasan, Navakanta Bhat. Impact of Channel Engineering on Unity Gain Frequency and Noise-Figure in 90nm NMOS Transistor for RF Applications. In 18th International Conference on VLSI Design (VLSI Design 2005), with the 4th International Conference on Embedded Systems Design, 3-7 January 2005, Kolkata, India. pages 392-396, IEEE Computer Society, 2005. [doi]

Abstract

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