Development of high-transmittance back-illuminated silicon-on-sapphire substrates thinned below 25 micrometers and bonded to fused silica for high quantum efficiency and high resolution avalanche photodiode imaging arrays

Alvin G. Stern. Development of high-transmittance back-illuminated silicon-on-sapphire substrates thinned below 25 micrometers and bonded to fused silica for high quantum efficiency and high resolution avalanche photodiode imaging arrays. In Ralf Widenhorn, Valérie Nguyen, Antoine Dupret, editors, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIII, Burlingame, California, USA, January 22-26, 2012. Volume 8298 of SPIE Proceedings, SPIE, 2012. [doi]