Epitaxial Growth of SiGe Interband Tunneling Diodes on Si(001) and on Si::0.7::Ge::0.3:: Virtual Substrates

Mathieu Stoffel, Jing Zhang, Oliver G. Schmidt. Epitaxial Growth of SiGe Interband Tunneling Diodes on Si(001) and on Si::0.7::Ge::0.3:: Virtual Substrates. IEICE Transactions, 89-C(7):921-925, 2006. [doi]

Abstract

Abstract is missing.