Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs - researchr publication authors

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Tetsuya Suemitsu, Yoshino K. Fukai, Hiroki Sugiyama, Kazuo Watanabe, Haruki Yokoyama. Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs. Microelectronics Reliability, 42(1):47-52, 2002. [doi]

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