Tetsuya Suemitsu, Yoshino K. Fukai, Hiroki Sugiyama, Kazuo Watanabe, Haruki Yokoyama. Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs. Microelectronics Reliability, 42(1):47-52, 2002. [doi]
@article{SuemitsuFSWY02,
title = {Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs},
author = {Tetsuya Suemitsu and Yoshino K. Fukai and Hiroki Sugiyama and Kazuo Watanabe and Haruki Yokoyama},
year = {2002},
doi = {10.1016/S0026-2714(01)00215-3},
url = {http://dx.doi.org/10.1016/S0026-2714(01)00215-3},
tags = {rule-based},
researchr = {https://researchr.org/publication/SuemitsuFSWY02},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {42},
number = {1},
pages = {47-52},
}