Circuit Techniques to Enhance Linearity and Intrinsic Gain to Realize a 1.2 V, 200 MHz, +10.3 dBm IIP3 and 7th-Order LPF in a 65 nm CMOS

Yasuhiro Sugimoto, Kazuma Sakatoh. Circuit Techniques to Enhance Linearity and Intrinsic Gain to Realize a 1.2 V, 200 MHz, +10.3 dBm IIP3 and 7th-Order LPF in a 65 nm CMOS. IEICE Transactions, 96-C(6):867-874, 2013. [doi]

@article{SugimotoS13,
  title = {Circuit Techniques to Enhance Linearity and Intrinsic Gain to Realize a 1.2 V, 200 MHz, +10.3 dBm IIP3 and 7th-Order LPF in a 65 nm CMOS},
  author = {Yasuhiro Sugimoto and Kazuma Sakatoh},
  year = {2013},
  url = {http://search.ieice.org/bin/summary.php?id=e96-c_6_867},
  researchr = {https://researchr.org/publication/SugimotoS13},
  cites = {0},
  citedby = {0},
  journal = {IEICE Transactions},
  volume = {96-C},
  number = {6},
  pages = {867-874},
}