Experimental study of bias dependence of pulsed laser-induced single-event transient in SiGe HBT - researchr publication authors

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Yabin Sun, Jun Fu, Yudong Wang, Wei Zhou, Zhihong Liu, Xiaojin Li, Yanling Shi. Experimental study of bias dependence of pulsed laser-induced single-event transient in SiGe HBT. Microelectronics Reliability, 65:41-46, 2016. [doi]

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