Ferroelectric Field Effect Transistors-Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility

Athira Sunil, Masud Rana SK, Maximilian Lederer, Yannick Raffel, Franz Müller 0001, Ricardo Olivo, Raik Hoffmann, Konrad Seidel, Thomas Kämpfe, Bhaswar Chakrabarti, Sourav De. Ferroelectric Field Effect Transistors-Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility. Adv. Intell. Syst., 6(4), April 2024. [doi]

Abstract

Abstract is missing.